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A block (128K Byte) of 1.5M data written to the levelx of the main line and the nand partition of 4M will be erased.
Trace the UINT _lx_nand_flash_metadata_allocate (LX_NAND_FLASH * nand_flash) call
_lx_nand_flash_driver_block_erase (nand_flash, block, nand_flash ->lx_nand_flash_base_erase_count+nand_flash ->lx_nand_flash_erase_count_table [block]) has been erased
, I locally implemented erase_count to erase multiple blocks, but the simulator only erased one block,
UINT _lx_nand_flash_simulator_block_erase (ULONG block, ULONG erase_count)
LX_PARAMETER_NOT_USED (erase_count);
According to the context, only one block is added to the list below, and it should be correct to erase only one block. I want to know the correct usage of erase_count.
The text was updated successfully, but these errors were encountered:
A block (128K Byte) of 1.5M data written to the levelx of the main line and the nand partition of 4M will be erased.
Trace the UINT _lx_nand_flash_metadata_allocate (LX_NAND_FLASH * nand_flash) call
_lx_nand_flash_driver_block_erase (nand_flash, block, nand_flash ->lx_nand_flash_base_erase_count+nand_flash ->lx_nand_flash_erase_count_table [block]) has been erased
, I locally implemented erase_count to erase multiple blocks, but the simulator only erased one block,
UINT _lx_nand_flash_simulator_block_erase (ULONG block, ULONG erase_count)
LX_PARAMETER_NOT_USED (erase_count);
According to the context, only one block is added to the list below, and it should be correct to erase only one block. I want to know the correct usage of erase_count.
The text was updated successfully, but these errors were encountered: