📝 Update publication list (#274)

cda-tum · Sep 5, 2023 · 10e6e3d · 10e6e3d
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diff --git a/docs/publications.rst b/docs/publications.rst
@@ -93,7 +93,8 @@ Furthermore, if you use any of the design automation algorithms, please consider
         @inproceedings{drewniok2023quicksimIEEE,
           title={{\emph{QuickSim}: Efficient \emph{and} Accurate Physical Simulation of Silicon Dangling Bond Logic}},
           author={Drewniok, Jan and Walter, Marcel and Ng, Samuel Sze Hang and Walus, Konrad and Wille, Robert},
-          booktitle={IEEE International Conference on Nanotechnology (IEEE NANO)},
+          booktitle={2023 IEEE 23rd International Conference on Nanotechnology (NANO)},
+          pages={817-822},
           year={2023}
         }
 
@@ -104,7 +105,8 @@ Furthermore, if you use any of the design automation algorithms, please consider
         @inproceedings{drewniok2023temperatureIEEE,
           title={{Temperature Behavior of Silicon Dangling Bond Logic}},
           author={Drewniok, Jan and Walter, Marcel and Wille, Robert},
-          booktitle={IEEE International Conference on Nanotechnology (IEEE NANO)},
+          booktitle={2023 IEEE 23rd International Conference on Nanotechnology (NANO)},
+          pages={925-930},
           year={2023}
         }
 

diff --git a/include/fiction/algorithms/simulation/sidb/critical_temperature.hpp b/include/fiction/algorithms/simulation/sidb/critical_temperature.hpp
@@ -444,8 +444,9 @@ class critical_temperature_impl
 /**
  *
  * This algorithm performs temperature-aware SiDB simulation as proposed in \"Temperature Behavior of Silicon Dangling
- * Bond Logic\" by J. Drewniok, M. Walter, and R. Wille in IEEE NANO 2023. It comes in two flavors: gate-based and
- * non-gate based, which can be specified using the `critical_temperature_mode` parameter.
+ * Bond Logic\" by J. Drewniok, M. Walter, and R. Wille in IEEE NANO 2023
+ * (https://ieeexplore.ieee.org/document/10231259). It comes in two flavors: gate-based and non-gate based, which can be
+ * specified using the `critical_temperature_mode` parameter.
  *
  * For gate-based simulation, the Critical Temperature is defined as follows: The temperature at which the excited
  * charge distributions are populated by more than \f$ 1 - \eta \f$, where \f$ \eta \in [0,1] \f$.

diff --git a/include/fiction/algorithms/simulation/sidb/quicksim.hpp b/include/fiction/algorithms/simulation/sidb/quicksim.hpp
@@ -51,10 +51,11 @@ struct quicksim_params
 
 /**
  * The *QuickSim* algorithm which was proposed in \"QuickSim: Efficient and Accurate Physical Simulation of Silicon
- * Dangling Bond Logic\" by J. Drewniok, M. Walter, S. S. H. Ng, K. Walus, and R. Wille in IEEE NANO 2023 is an
- * electrostatic ground state simulation algorithm for SiDB layouts. It determines physically valid charge
- * configurations (with minimal energy) of a given (already initialized) charge distribution layout. Depending on the
- * simulation parameters, the ground state is found with a certain probability after one run.
+ * Dangling Bond Logic\" by J. Drewniok, M. Walter, S. S. H. Ng, K. Walus, and R. Wille in IEEE NANO 2023
+ * (https://ieeexplore.ieee.org/document/10231266) is an electrostatic ground state simulation algorithm for SiDB
+ * layouts. It determines physically valid charge configurations (with minimal energy) of a given (already initialized)
+ * charge distribution layout. Depending on the simulation parameters, the ground state is found with a certain
+ * probability after one run.
  *
  * @tparam Lyt Cell-level layout type.
  * @param lyt The layout to simulate.