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afm-sim (HoppingDynamics engine in SiQAD)

Hopping dynamics simulation and animation for silicon dangling bond devices.

Hopping Model Animator

Interactive simulation of the surface charge configurations. Charge dynamics are simulated using Hopping rate calculation from a choice of Hopping Models.

Main Functionality

  • Approximately real time simulation of surface configurations.
  • Control of certain physical and modeling parameters (see Options Panel below).
  • Automatic population control through surface-bulk(reservoir) hopping.
  • Placement of doubly occupied perturbers during simulation.
  • Integration of a simple STM tip model (In Progress)
  • Clocking field generation.

Keyboard shortcuts:

Key Behaviour
Q Close the animator (and compile the recording if enabled)
O Open the options panel
P Pause animation
T When clocking, start a timer which automatically pauses the animation after a quarter phase.
S Timestamped .png screenshot of display window (no sidepanel) to local directory
Shift + S Timestamped .svg/.pdf screenshot of display window with capture presets.
Space Advance the simulation one time step, somewhat deprecated.
- Zoom out
+ or = Zoom in
E Zoom extents
L Start line-scan at current dimer row if tip channel included.
D Detach GUI hook for Debug

Mouse Commands

Button Behaviour
Left Click Clicking any hydrogen site will add/remove a fixed charge at that location.
Right Click Right clicking a DB will track its local potential on the options dialog. Re-click the same DB or a hydrogen site to end the tracking.
Middle Click Panning
Control + Wheel Zoom anchored at cursor.

Tip Paths

If the tip is enabled (see Tip Properties in Options Panel below), you are able to specify paths for the tip to follow. When first created, the tip will appear at the origin of the scene coordinates. Holding shift and left clicking will cause the tip to move to the clicked position at the current tip scan rate (changeable under Tip Properties).

There are currently two programmed paths:

  1. Line Scan: The L shortcut or Line button will start a line scan along the x axis that is as wide as your full device plus the Padding. This scan will occur on the nearest dimer row to the initial tip position.
  2. Full Scan: The Full button will perform a 2D raster scan over a rectangle containing the full device plus Padding on each side. The tip will device this region into Lines line scans.

These paths, and the manual paths described below, repeat. To stop the tip, you currently have to shift click.

Creating paths

If you hold control while shift clicking, it indicates a node along a multi-node path. You can continue to shift click, holding the control key, for as many points as you like. Once control is released, the tip will begin to trace the specified path.

Options Panel

The options panel offers a selection of parameter controls/views for debugging purposes. Details of slider controls can be found in the hover tooltips.

Field Context
DB-Beff Local potential experience by targeted DB, see Right Click behaviour
Lifetime Countdown for tracked DB. When the countdown runs out, the occupying charge will hop.
# electrons Current number of electrons in the surface DBs.
Runtime Load Percentage of time between frames used for simulating the surface state. If greater than 100%, the animation is no longer running in real time.

Animation Controls
Viewer See below
log(rate) Changes the time step of the animator by 10^rate

Hopping Model
lambda Self trapping energy. At lambda=0, hopping models are calibrated to match the 1-2-2-1 results.
factor Hopping rates are multiplied by 10^factor. Use instead of rate to increase just the hopping rates.
FRH To increase performance, hops are only allowed within a certain range and cohopping only allowed from occupied DB pairs within a certain range. The FRH parameters change this range.

Bulk Properties
mu Chemical potential for utomatic population mechanism. This is effectively the energy difference between the Fermi level and the DB- state of an isolated DB.

Tip Properties
Tip If the Tip channel is included in the Hopping model, "Tip properties" and "Tip programs" will be available in the options
scale Scales the tip influence, TIBB and ICIBB. Tip seems to be fairly well behaved for scale < 0.3 or so.
epsr Relative permittivity for Coulomb interactions between DBs and image charges. Lower epsr will make ICIBB stronger
H Tip height above the surface, in pm
ICIBB R Tip radius for ICIBB (image charge localised near the point of the tip)
TIBB R Tip radius for TIBB (blunt tip with long range contact potential influence)
rate Tip scanning speed

Tip Programs
Padding Extra space added to the outside of line and full (2D raster) scans
Lines Number of lines/rows in the full scan
Line Start a line scan horizontally along the nearest row of atoms.
Full Scan the tip over a region containing the full device.

Clocking Field
Clocking If the Clocking channel is incuded in the Hopping model, "Clocking Field" will be available in the options. The clock is a sinusoidal potential that travels to the right and effectively shifts the DB- level.
Frequency Frequency of the clocking field
Amplitude Amplitude of the clocking field, in eV
Offset Offset of the clocking field, essentially equivalent to more mu
Flat Clock Currently broken: essentially sets the wavelength to infinite.

Viewer

alt text

The Viewer is an additional tool which shows a representation of the device (currently collapsed onto the x axis). A well is drawn for each well with the black line indicating the energy of the DB- state and the green dots showing the current charge locations. For significant lambda, the dots will be noticeably lower than the DB- levels to indicate the self-trapping. If a DB is being tracked (see Right Click behaviour), blue lines will be shown for the possible hopping targets which indicate the effective energy level seen by the tracked charge. The tip will be shown if included with both radii shown and the apex indicated. Clearly insert figure here.

Current Bugs

If there are ever fewer than 2 free DBs the cohopping implementation will throw an Error. Edit: 2018.05.02 Not sure if this still happens

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AFM simulation of SiDB structures.

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